2N2907 / 2N2907a pnp silicon epitaxial planar transistor for switching and af amplifier applications. the transistor is subdivided into one group according to its dc current gain. as complementary type the npn transistor st 2n2222 and st 2n2222a are recommended. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 o c) value parameter symbol st 2N2907 st 2N2907a unit collector base voltage -v cbo 60 v collector emitter voltage -v ceo 40 60 v emitter base voltage -v ebo 5 v collector current -i c 600 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2N2907 / 2N2907a characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -i c = 0.1 ma, -v ce = 10 v at -i c = 1 ma, -v ce = 10 v at -i c = 10 ma, -v ce = 10 v at -i c = 150 ma, -v ce = 10 v at -i c = 500 ma, -v ce = 10 v st 2N2907 st 2N2907a st 2N2907 st 2N2907a st 2N2907 st 2N2907a st 2N2907 st 2N2907a h fe h fe h fe h fe h fe h fe h fe h fe h fe 35 75 50 100 75 100 100 30 50 - - - - - - 300 - - - - - - - - - - - collector cutoff current at -v cb = 50 v st 2N2907 st 2N2907a -i cbo -i cbo - - 20 10 na na collector base breakdown voltage at -i c = 10 a -v (br)cbo 60 - v collector emitter breakdown voltage at -i c = 10 ma st 2N2907 st 2N2907a -v (br)ceo -v (br)ceo 40 60 - - v v emitter base breakdown voltage at -i e = 10 a -v (br)ebo 5 - v collector saturation voltage at -i c = 150 ma, -i b = 15 ma at -i c = 500 ma, -i b = 50 ma -v ce(sat) -v ce(sat) - - 0.4 1.6 v v base saturation voltage at -i c = 150 ma, -i b = 15 ma at -i c = 500 ma, -i b = 50 ma -v be(sat) -v be(sat) - - 1.3 2.6 v v gain bandwidth product at -i c = 50 ma , -v ce = 20 v, f = 100 mhz f t 200 - mhz collector output capacitance at -v cb = 10 v, f = 1 mhz c ob - 8 pf input capacitance at -v be = 2 v, f = 1 mhz c ib - 30 pf
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